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IRF6712SPBF IRF6712STRPbF
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.FET and some Control FET
PD - 97273F
Typical values (unless otherwise specified)
DirectFET Power MOSFET RDS(on) Qgs2
1.7nC
VDSS Qg
tot
VGS Qgd
4.0nC
RDS(on) Qoss
10nC
25V max 20V max 3.8m@ 10V 6.7m@ 4.5V
Qrr
14nC
Vgs(th)
1.9V
12nC
application
l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested
SQ
ST MQ MX MT MP
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX
Description
The IRF6712SPBF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6712SPBF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6712SPBF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
12
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
25 20 17 13 68 130 13 13
14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 5 10 15 20 25 30 ID= 13A VDS= 20V VDS= 13V
A
mJ A
10 8 6 4 2 0 2 3 4 5 6 7 8 TJ = 25C T J = 125C
ID = 17A
9 10 11 12 13 14 15 16
35
VGS, Gate -to -Source Voltage (V)
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.14mH, RG = 25, IAS = 13A.
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04/29/09
IRF6712SPBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 --- --- --- 1.4 --- --- --- --- --- 40 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 18 3.8 6.7 1.9 -6.1 --- --- --- --- --- 12 2.9 1.7 4.0 3.5 5.8 10 1.7 11 40 14 12 1570 490 210 --- --- 4.9 8.7 2.4 --- 1.0 150 100 -100 --- 18 --- --- --- --- --- --- 3.0 --- --- --- --- --- --- --- pF nC
Conditions
V VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 17A V mV/C A nA S VGS = 4.5V, ID = 13A VDS = VGS, ID = 50A VDS = 25V, VGS = 0V VDS = 25V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 13A VDS = 13V nC VGS = 4.5V ID = 13A See Fig. 15 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5VAi ID = 13A RG = 1.8 See Fig. 17 VGS = 0V VDS = 13V = 1.0MHz
i i
ns
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ag Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- 0.81 17 14 17 A 2.7 1.0 26 21 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 13A, VGS = 0V TJ = 25C, IF = 13A di/dt = 200A/s
i
i
Notes:
Pulse width 400s; duty cycle 2%.
2
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IRF6712SPBF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
e e f
Parameter
Max.
2.2 1.4 36 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
el jl kl fl
Parameter
Typ.
--- 12.5 20 --- 1.0 0.017
Max.
58 --- --- 3.5 ---
Units
C/W
eA
W/C
100 D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 4 R5 R5 A 1 2 3 4 5 5 A
1
Ri (C/W)
1.61955 2.14056 22.2887 20.0457 11.9144
i (sec)
0.000126 0.001354 0.375850 7.41 99
0.1
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 0.01 0.1 1 10 100 1000
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6712SPBF
1000 60s PULSE WIDTH Tj = 25C 1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
60s PULSE WIDTH
Tj = 150C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1
10
0.1
2.5V
2.5V 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 TJ = 150C TJ = 25C TJ = -40C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
2.0 ID = 17A
ID, Drain-to-Source Current (A)
1.5
V GS = 10V V GS = 4.5V
10
1.0
1
0.1 1 2 3 4 5
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
Fig 7. Normalized On-Resistance vs. Temperature
25 T J = 25C 20 Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
Ciss 1000 Coss
Typical RDS(on) ( m)
C, Capacitance(pF)
15
10
Crss
5
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0 0 50 100 150
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6712SPBF
1000 VGS = 0V 100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10 T J = 150C T J = 25C 1 T J = -40C
10
10msec 1msec
1
T A = 25C T J = 150C Single Pulse 0.10 1.00 10.00 100.00
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VSD, Source-to-Drain Voltage (V)
0.1 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
3.0
70 60
ID, Drain Current (A)
50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C)
2.5
2.0 ID = 50A 1.5 ID = 100A ID = 1.0mA ID = 1.0A 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
ID = 250A
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 3.8A 5.4A BOTTOM 13A TOP
50 40 30 20 10 0 25 50 75
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6712SPBF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS tp
+ - VDD
A
20V
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
VDS 90%
D.U.T.
+
- V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6712SPBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
DirectFET Board Footprint, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D G D S
D
D
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IRF6712SPBF
DirectFET Outline Dimension, SQ Outline (Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 4.85 4.75 A 3.95 B 3.70 2.85 C 2.75 0.45 0.35 D 0.52 E 0.48 0.82 0.78 F 0.92 G 0.88 0.82 H 0.78 N/A J N/A 0.97 K 0.93 2.10 L 2.00 M 0.616 0.676 R 0.020 0.080 0.17 P 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.019 0.020 0.031 0.032 0.035 0.036 0.031 0.032 N/A N/A 0.037 0.038 0.079 0.083 0.0235 0.0274 0.0008 0.0031 0.003 0.007
DirectFET Part Marking
Line above the last character of the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF6712SPBF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6712TRPBF). For 1000 parts on 7" reel, order IRF6712TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION IMPERIAL METRIC METRIC MIN MAX MIN MIN CODE MAX MAX 12.992 A N.C N.C 177.77 N.C 330.0 0.795 B N.C 19.06 20.2 N.C N.C 0.504 C 0.520 13.5 12.8 13.2 12.8 0.059 D N.C 1.5 1.5 N.C N.C 3.937 E 58.72 100.0 N.C N.C N.C N.C F N.C N.C 18.4 0.724 13.50 0.488 G 0.567 11.9 12.4 14.4 12.01 H 0.469 0.606 11.9 11.9 15.4 12.01 (QTY 1000) IMPERIAL MIN MAX 6.9 N.C 0.75 N.C 0.53 0.50 0.059 N.C 2.31 N.C N.C 0.53 0.47 N.C 0.47 N.C
Loaded Tape Feed Direction
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS METRIC IMPERIAL MIN MIN MAX MAX 0.311 7.90 0.319 8.10 0.154 0.161 3.90 4.10 0.469 11.90 0.484 12.30 0.215 5.45 0.219 5.55 0.158 4.00 0.165 4.20 0.197 5.00 0.205 5.20 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2009
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